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  Datasheet File OCR Text:
 SMD Type
High Voltage Transistor FMMT593
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
Features
SOT23 PNP silicon planar
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -120 -100 -5 -2 -1 -200 500 -55 to +150 Unit V V V A A mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
FMMT593
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector-Emitter Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO ICES IEBO VCE(sat) VCB=-100V VCE=-100V VEB=-4V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA VBE(sat) IC=-500mA, IB=-50mA VBE(ON) IC=-1mA,VCE=-5V IC=-1mA, VCE=-5V Static Forward Current Transfer Ratio hFE IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V, Current-gain-bandwidth product Output capacitance * Pulse test: tp = 300 is; d 0.02. fT Cobo IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz Testconditons
Transistors
Min -120 -100 -5
Typ
Max
Unit V V V
-100 -100 -100 -0.2 -0.3 -1.1 -1.0 100 100 100 50 50 5 300
nA nA nA V V V V
MHz pF
Marking
Marking 593
2
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